VS-60CTQ150HN3 www.vishay.com vishay semiconductors revision: 09-jan-15 1 document number: 95839 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high performance schottky rectifier, 2 x 30 a features ? 175 c t j operation ? low forward voltage drop ? high frequency operation ? high purity, high temperature epoxy encapsulation for enhanced mechanical strength and mois ture resistance ? guard-ring for enhanced ruggedness and long term reliability ? aec-q101 qualified, meets jesd 201 class 2 whisker test ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 description the center tap schottky rectifie r series has been optimized for low reverse leakage at high temperature. the proprietary barrier technology allows for reliable operation up to 175 c junction tempera ture. typical applications are in switching power supplies, converters , freewheeling diodes, and reverse battery protection. product summary package to-220ab i f(av) 2 x 30 a v r 150 v v f at i f 0.72 v i rm max. 20 ma at 125 c t j max. 175 c diode variation common cathode e as 0.4 mj anode 13 2 base common cathode 2 common cathode anode to-220ab available major ratings and characteristics symbol characteristics values units i f(av) rectangular wa v eform 60 a v rrm 150 v i fsm t p = 5 s sine 710 a v f 30 a pk , t j = 125 c (typical, per leg) 0.69 v t j range -55 to +175 c voltage ratings parameter symbol VS-60CTQ150HN3 units maximum dc reverse voltage v r 150 v maximum working peak reverse voltage v rwm absolute maximum ratings parameter symbol test conditions values units maximum a v erage forward current, see fig. 5 per leg i f(av) 50 % duty cycle at t c = 137 c, rectangular waveform 30 a per de v ice 60 maximum peak one cycle non-repetiti v e ? surge current per leg, see fig. 7 i fsm 5 s sine or 3 s rect. pulse following any rated load condition and with rated v rrm applied 710 10 ms sine or 6 ms rect. pulse 270 non-repetiti v e a v alanche energy per leg e as t j = 25 c, i as = 0.9 a, l = 1 mh 0.4 mj repetiti v e a v alanche current per leg i ar current decaying linearly to zero in 1 s ? frequency limited by t j maximum v a = 1.5 x v r typical 0.9 a
VS-60CTQ150HN3 www.vishay.com vishay semiconductors revision: 09-jan-15 2 document number: 95839 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) pulse width < 300 s, duty cycle < 2 % electrical specifications parameter symbol test conditions typ max. units maximum forward v oltage drop per leg ? see fig. 1 v fm (1) 30 a t j = 25 c 0.83 0.88 v 60 a 0.98 1.09 30 a t j = 125 c 0.67 0.72 60 a 0.82 0.87 maximum re v erse leakage current per leg see fig. 2 i rm t j = 25 c v r = rated v r 775a t j = 125 c 7.2 20 ma typical junction capacitance per leg c t v r = 5 v dc (test signal range 100 khz to 1 mhz) 25 c - 650 pf typical series inductance per leg l s measured lead to lead 5 mm from package b ody -7.5nh maximum v oltage rate of change dv/dt rated v r - 10 000 v/s thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage ? temperature range t j , t stg -55 to +175 c maximum thermal resistance, ? junction to case per leg r thjc dc operation, see fig. 4 1.2 c/w per package dc operation 0.6 typical thermal resistance, ? case to heatsink r thcs mounting surface, smooth and greased 0.25 approximate weight 6g 0.21 oz. mounting torque minimum 6 (5) kgf cm (l b f in) maximum 12 (10) marking de v ice case style to-220ab 60ctq150h
VS-60CTQ150HN3 www.vishay.com vishay semiconductors revision: 09-jan-15 3 document number: 95839 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - maximum forward voltage drop characteristics (per leg) fig. 2 - typical values of reverse current vs. reverse voltage (per leg) fig. 3 - typical junction capacitance vs. reverse voltage (per leg) fig. 4 - maximum thermal impedance z thjc characteristics (per leg) 1 100 10 1000 i f - instantaneousforward current (a) v fm - forward voltage drop (v) 0.2 0.4 0.6 0.8 1.0 1.2 2.0 1.4 1.6 1.8 t j = 175 c t j = 125 c t j = 25 c 0.001 1 10 100 0.1 0.01 i r - reverse current (ma) v r - reverse voltage (v) 40 20 60 80 140 160 100 120 0 t j = 175 c t j = 150 c t j = 125 c t j = 100 c t j = 75 c t j = 50 c t j = 25 c 100 1000 c t - junction capacitance (pf) v r - reverse voltage (v) 40 80 160 120 0 t j = 125 c 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) 10 single pulse (thermal resistance) d = 0.75 d = 0.50 d = 0.33 d = 0.25 d = 0.20 p dm t 1 t 2 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c
VS-60CTQ150HN3 www.vishay.com vishay semiconductors revision: 09-jan-15 4 document number: 95839 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum allowable case temperature vs. average forward current (per leg) fig. 6 - forward power loss characteristics (per leg) fig. 7 - maximum non-repetiti ve surge current (per leg) fig. 8 - unclamped inductive test circuit note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; ? pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); ? pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 80 % rated v r 90 100 110 120 130 140 180 170 160 150 allowable case temperature (c) i f(av) - average forward current (a) 25 20 30 35 40 45 0 5 10 15 dc see note (1) s qu are w ave (d = 0.50) 80 % rated v r applied 0 5 15 30 25 20 10 35 average power loss (w) i f(av) - average forward current (a) 10 51520 45 25 30 35 40 0 dc rms limit d = 0.75 d = 0.50 d = 0.33 d = 0.25 d = 0.20 100 1000 i fsm - non-repetitive surge current (a) t p - square wave pulse duration (s) 100 1000 10 000 10 at any rated load condition and w ith rated v rrm applied follo w ing s u rge c u rrent monitor high-speed s w itch d.u.t. r g = 25 + free w heel diode v d = 25 v l irfp460 40hfl40s02
VS-60CTQ150HN3 www.vishay.com vishay semiconductors revision: 09-jan-15 5 document number: 95839 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description VS-60CTQ150HN3 50 1000 antistatic plastic tube links to related documents dimensions www.vishay.com/doc?95222 part marking information www.vishay.com/doc?95028 device code 6 2 4 3 5 8 60 c t q 150 n3 7 h vs- 1 2 - current rating (60 = 60 a) 3 - circuit configuration c = common cathode 4 - package t = to-220 5 - schottky ?q? series 6 - voltage rating (150 = 150 v) 7 - h = aec-q101 qualified 8 - n3 = halogen-free, rohs-compliant, and totally lead (pb)-free 1 - vishay semiconductors product environmental digit
document number: 95222 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 08-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 to-220ab outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and tolerancin g as per asme y14.5m-1994 (2) lead dimension and fini sh uncontrolled in l1 (3) dimension d, d1 and e do not in clude mold flash. mold flash shall not exceed 0.127 mm (0.005" ) per side. these dimensions are measured at the outermost extremes of th e plastic body (4) dimension b1, b3 and c1 apply to base metal only (5) controlling dimensions: inches (6) thermal pad contour optional within dimensions e, h1, d2 and e1 (7) dimensions e2 x h1 define a zone where stamping and singulation irregularities are allowed (8) outline conforms to jedec to- 220, except a2 (maximum) and d2 (minimum) where dimensions are derived from the actual package outline symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.25 4.65 0.167 0.183 e 10.11 10.51 0.398 0.414 3, 6 a1 1.14 1.40 0.045 0.055 e1 6.86 8.89 0.270 0.350 6 a2 2.56 2.92 0.101 0.115 e2 - 0.76 - 0.030 7 b 0.69 1.01 0.027 0.040 e 2.41 2.67 0.095 0.105 b1 0.38 0.97 0.015 0.038 4 e1 4.88 5.28 0.192 0.208 b2 1.20 1.73 0.047 0.068 h1 6.09 6.48 0.240 0.255 6, 7 b3 1.14 1.73 0.045 0.068 4 l 13.52 14.02 0.532 0.552 c 0.36 0.61 0.014 0.024 l1 3.32 3.82 0.131 0.150 2 c1 0.36 0.56 0.014 0.022 4 ? p 3.54 3.73 0.139 0.147 d 14.85 15.25 0.585 0.600 3 q 2.60 3.00 0.102 0.118 d1 8.38 9.02 0.330 0.355 ? 90 to 93 90 to 93 d2 11.68 12.88 0.460 0.507 6 13 2 d d1 h1 q 13 2 c c d d 3 x b2 3 x b (b, b2) b1, b3 (h1) d2 detail b c a b l e1 lead tip e e2 ? p 0.014 a b m m 0.015 a b mm s eating plane c a2 a1 a a a lead assignments diode s 1. - anode/open 2. - cathode 3. - anode conforms to jedec outline to-220ab (6) (6) (7) (6) (7) e 2 x l1 (2) detail b s ection c - c and d - d view a - a ba s e metal plating (4) (4) c1 c (6) thermal pad (e) e1 (6)
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